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HY27UG082G2M Datasheet - Hynix Semiconductor

(HY27xx Series) 2G-Bit NAND Flash

HY27UG082G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact

HY27UG082G2M General Description

The HYNIX HY27(U/S)G(08/16)2G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can.

HY27UG082G2M Datasheet (394.96 KB)

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Datasheet Details

Part number:

HY27UG082G2M

Manufacturer:

Hynix Semiconductor

File Size:

394.96 KB

Description:

(hy27xx series) 2g-bit nand flash.
Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History w w w .D 0.0 at h S a t e e 4U . m o c Preliminary HY27UG.

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HY27UG082G2M HY27xx Series 2G-Bit NAND Flash Hynix Semiconductor

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