HY27UG162G2M, HY27UG082G2M Datasheet - Hynix Semiconductor

HY27UG162G2M (HY27xx Series) 2G-Bit NAND Flash

The HYNIX HY27(U/S)G(08/16)2G2M series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can.

Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History w w w .D 0.0 at h S a t e e 4U . m o c Preliminary HY27UG(08/16)2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Revision No. History Initial Draft. 1) Add Errata tCLS Specification Relaxed value 0 5 Case Specification Read(all) Except for tCLH tWP tALS tALH 10 15 tRC 50 50 60 25 45 0 5 10 15 tDS 20 25 tWC 50 70 tR 25us 27us Draft Date Nov. 19. 2004 Remark Preliminary t.

HY27UG162G2M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufact

HY27UG082G2M_HynixSemiconductor.pdf