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HY27US081G1M Datasheet, Hynix Semiconductor

HY27US081G1M Datasheet, Hynix Semiconductor

HY27US081G1M

datasheet Download (Size : 312.09KB)

HY27US081G1M Datasheet

HY27US081G1M flash equivalent, 1gbit (128mx8bit / 64mx16bit) nand flash.

HY27US081G1M

datasheet Download (Size : 312.09KB)

HY27US081G1M Datasheet

Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pino.

Application

NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ER.

Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1 Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEAT.

Image gallery

HY27US081G1M Page 1 HY27US081G1M Page 2 HY27US081G1M Page 3

TAGS

HY27US081G1M
1Gbit
128Mx8bit
64Mx16bit
NAND
Flash
Hynix Semiconductor

Manufacturer


Hynix Semiconductor

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