* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycl
HY27US081G1M Datasheet (312.09 KB)
HY27US081G1M
Hynix Semiconductor
312.09 KB
1gbit (128mx8bit / 64mx16bit) nand flash.
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general pr.
📁 Related Datasheet
HY27US08121A 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory (Hynix Semiconductor)
HY27US08121B 512Mb NAND FLASH (Hynix Semiconductor)
HY27US08121M (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash (Hynix Semiconductor)
HY27US08122B 512Mb NAND FLASH (Hynix Semiconductor)
HY27US08281A (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory (Hynix Semiconductor)
HY27US08561A (HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash (Hynix Semiconductor)
HY27US08561M (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash (Hynix Semiconductor)
HY27US16121A 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory (Hynix Semiconductor)
HY27US16121B 512Mb NAND FLASH (Hynix Semiconductor)
HY27US16121M (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash (Hynix Semiconductor)
