HY27US081G1M
description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout patibility for all densities FAST BLOCK ERASE
- Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle : Device Code SUPPLY VOLTAGE
- VCC = 2.7 to 3.6V : HY27USxx1G1M Memory Cell Array = (512+16) Bytes x 32 Pages x 8,192 Blocks = (256+8) Words x 32 Pages x 8,192 Blocks PAGE SIZE
- x8 device : (512 + 16 spare) Bytes : HY27US081G1M
- x16 device : (256+ 8 spare) Words : HY27US161G1M AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download SERIAL NUMBER OPTION...
