HY29F400BT55 Datasheet | SK Hynix

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY Features n 5 Volt Read, Program, and Erase - Minimizes system-level power requirements n High Performance - Access times as fast as 45 ns n Low Power Consumption - 20 m A typical active read current in byte mode, 28 m A typical in word mode - 30 m A typical program/erase current - 5 µA maximum CMOS standby current n patible with JEDEC Standards - Package, pinout and mand-set patible with the single-supply Flash device standard - Provides superior inadvertent write protection n Sector Erase Architecture - Boot sector architecture with top and bottom boot block options available - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and seven 64 Kbyte sectors in byte mode - One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors in word mode - A mand can erase any bination of sectors - Supports full chip erase n Erase Suspend/Resume - Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased GENERAL DESCRIPTION The HY29F400 is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages. The HY29F400 can be programmed and erased in-system with a single 5-volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a high voltage power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as fast as 55 ns over the full operating voltage range of 5.0 volts ± 10% are offered for timing patibility with the zero wait state requirements of high speed micropro Revision 5.2, May 2001 n Sector Protection - Any bination of sectors may be locked to prevent program or erase operations within those sectors n Temporary Sector Unprotect - Allows changes in locked sectors...