5 views

HY57V161610D-I Datasheet - Hynix Semiconductor

HY57V161610D-I 2 Banks x 512K x 16 Bit Synchronous DRAM

THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a .

HY57V161610D-I Features

* Single 3.0V to 3.6V power supplyNote1)

* Auto refresh and self refresh

* All device pins are compatible with LVTTL interface

* 4096 refresh cycles / 64ms

* JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch

* All inputs and outputs refer

HY57V161610D-I-HynixSemiconductor.pdf