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HY57V561620FT-5 - 256M (16M x 16bit) Hynix SDRAM Memory

Download the HY57V561620FT-5 datasheet PDF. This datasheet also covers the HY57V561620FT-6 variant, as both devices belong to the same 256m (16m x 16bit) hynix sdram memory family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY57V561620FT-6-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Overview

256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general.

Key Features

  • Standard SDRAM Protocol.
  • Internal 4bank operation.
  • Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V.
  • All device pins are compatible with LVTTL interface.
  • Low Voltage interface to reduce I/O power.
  • 8,192 Refresh cycles / 64ms.
  • Programmable CAS latency of 2 or 3.
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
  • 0oC ~ 70oC Operation.
  • Package Type : 54_Pin TSOPII (Lead Free,.

More Datasheets from SK Hynix

Part Number Description
HY57V561620FT-6 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FT-H 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FTP-5 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FTP-6 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FTP-H 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLT-5 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLT-6 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLT-H 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-5 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-6 256M (16M x 16bit) Hynix SDRAM Memory