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HY57V56820CLT Datasheet 4 Banks x 8M x 8Bit Synchronous DRAM

Manufacturer: SK Hynix

Download the HY57V56820CLT datasheet PDF. This datasheet also includes the HY57V56820CT variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HY57V56820CT_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

The HY57V56820C is organized as 4banks of 8,388,608x8.

The HY57V56820C is offering fully synchronous operation referenced to a positive edge of the clock.

Overview

www.DataSheet4U.com HY57V56820C(L)T 4 Banks x 8M x 8Bit Synchronous.

Key Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
  • Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
  • - 1, 2, 4 o.

More Datasheets from SK Hynix

Part Number Description
HY57V56820CT 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V56820BLT 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V56820BT 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BLT-I 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620BT-I 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CLT 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CT 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CTP 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620FLT-5 256M (16M x 16bit) Hynix SDRAM Memory