HY57V641620ET Datasheet - Hynix Semiconductor

HY57V641620ET, 4-Bank x 1M x 16-Bits SDRAM

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.5 / Feb. 2005 1 m o .c U 4 t e e h S a at .D w w w Synchronous DRAM Memory 64Mbit (4Mx16bit) HY57V641620E(L/S)T(P)-xI Series DESCRIPTION The Hyni.

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Datasheet Details

Part number:

HY57V641620ET

Manufacturer:

Hynix Semiconductor

File Size:

144.66 KB

Description:

4-Bank x 1M x 16-Bits SDRAM

HY57V641620ET Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

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HY57V641620ET 4-Bank 16-Bits SDRAM Hynix Semiconductor

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