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HY57V641620ET 4-Bank x 1M x 16-Bits SDRAM

HY57V641620ET Description

m o c .64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O U 4 t e e Document Title h S a Revision at History .D w w w 4Bank x 1M x 16bits Synchronous .
and is subject to change without notice.

HY57V641620ET Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

HY57V641620ET Applications

* which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. HY57V641620E(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The

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Datasheet Details

Part number
HY57V641620ET
Manufacturer
Hynix Semiconductor
File Size
144.66 KB
Datasheet
HY57V641620ET_HynixSemiconductor.pdf
Description
4-Bank x 1M x 16-Bits SDRAM

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