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HY5R128HC745 - (HY5R1xxHCxxx) RDRAM

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Description

and is subject to change without notice.

Hyundai Electronics does not assume any responsibility for use of circuits described.

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Features

  • for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 128/144-Mbit Direct RDRAMs are offered in a uBGA package suitable for desktop as well as low-profile add-in card and mobile.

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Datasheet Details

Part number HY5R128HC745
Manufacturer Hynix Semiconductor
File Size 2.48 MB
Description (HY5R1xxHCxxx) RDRAM
Datasheet download datasheet HY5R128HC745 Datasheet
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Full PDF Text Transcription

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Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer www.DataSheet4U.com rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes).
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