Datasheet4U Logo Datasheet4U.com

HY5R128HC745 - (HY5R1xxHCxxx) RDRAM

HY5R128HC745 Description

Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable f.
and is subject to change without notice.

HY5R128HC745 Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 128/144-Mbit Direct

HY5R128HC745 Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permit

📥 Download Datasheet

Preview of HY5R128HC745 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HY5-P - Current Transducers HY 5 to 25-P (LEM)
  • HY50-P - Current Transducer HY 50-P (LEM)
  • HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
  • HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
  • HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
  • HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)

📌 All Tags

HY5R1xxHCxxx RDRAM Hynix Semiconductor
Hynix Semiconductor HY5R128HC745-like datasheet