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HY5R288HCxxx, HY5R288HC745 - RDRAM

HY5R288HCxxx Description

Direct RDRAMâ„¢ 256/288-Mbit (512Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAMâ„¢ is a general purpose highperformance memory device suitable.
and is subject to change without notice.

HY5R288HCxxx Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 256/288-Mbit Direct

HY5R288HCxxx Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit Direct Rambus DRAMs (RDRAM)are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits

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This datasheet PDF includes multiple part numbers: HY5R288HCxxx, HY5R288HC745. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HY5R288HCxxx, HY5R288HC745
Manufacturer
Hynix Semiconductor
File Size
2.62 MB
Datasheet
HY5R288HC745_HynixSemiconductor.pdf
Description
RDRAM
Note
This datasheet PDF includes multiple part numbers: HY5R288HCxxx, HY5R288HC745.
Please refer to the document for exact specifications by model.

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Hynix Semiconductor HY5R288HCxxx-like datasheet