HY5R288HCxxx, HY5R288HC745 Datasheet - Hynix Semiconductor

HY5R288HCxxx RDRAM

and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. 1 Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Pinouts and Definitions Center-Bonded Devices These tables shows the pin as.

Direct RDRAM™ 256/288-Mbit (512Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit Direct Rambus DRAMs (RDRAM)are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz .

HY5R288HCxxx Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Figure 1: Direct RDRAM uBGA Package The 256/288-Mbit Direct

HY5R288HC745_HynixSemiconductor.pdf