HY5S5B6ELF-HE - 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

Hynix Semiconductor

Datasheet Details

Part number	HY5S5B6ELF-HE
Manufacturer	Hynix Semiconductor
File Size	241.92 KB
Description	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Datasheet	HY5S5B6ELF-HE_HynixSemiconductor.pdf

and is subject to change without notice.

Standard SDRAM Protocol.
Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank operation Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features PASR(Partial Array Self Refresh) Auto TCSR (Temperature Compensated Self Refresh) DS (Drive Strength) Deep Power Down Mode.
- HY5S5B6ELFP : Lead Free.

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Published: Mar 2, 2011 |