HY5V66EF6P dram equivalent, (hy5v66exf6x) cmos synchronous dram.
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* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) Al.
which require wide data I/O and high bandwidth. HY5V66E(L)F6(P) is organized as 4banks of 1,048,576 x 16. HY5V66E(L)F6(P.
and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / June. 2005 1
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Synchronous DRAM Memory 64Mbit (4Mx16bit) HY5V66E(L)F6(P) S.
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