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HY5V66ELF6P - (HY5V66ExF6x) CMOS Synchronous DRAM

Download the HY5V66ELF6P datasheet PDF. This datasheet also covers the HY5V66EF6 variant, as both devices belong to the same (hy5v66exf6x) cmos synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5V66EF6_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5V66ELF6P
Manufacturer SK Hynix
File Size 253.56 KB
Description (HY5V66ExF6x) CMOS Synchronous DRAM
Datasheet download datasheet HY5V66ELF6P Datasheet

Full PDF Text Transcription

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www.DataSheet4U.com 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 Initial Draft 1. Editorial chage 0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension) Before dimension : History Draft Date Dec. 2004 Remark Preliminary 0.80 Typ. 0.65 Typ. 0.2 After dimension : June. 2005 Preliminary 0.450 +/- 0.05 0.65 Typ. 2. Added Speed Product(100MHz CL2) (see to Page 02) This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / June. 2005 1 www.DataSheet4U.
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