Datasheet Summary
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HY62V8400A Series
512Kx8bit CMOS SRAM
Document Title
512K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No 03 History Revision History Insert Revised
- Improved standby current Isb1 : 30uA ¡ æ 20uA Revised
- Change Iccdr Value : 15uA => 20uA Marking Information Add Revised
- E.T (-25~85°C), I.T (-40~85°C) Part Insert
- AC Test Condition Add : 5pF Test Load
- VIH max : Vcc + 0.2V => Vcc + 0.3V
- VIL min :
- 0.2V =>
- 0.3V Changed Logo
- HYUNDAI -> hynix
- Marking Information Change Draft Date Jul.06.2000 Remark Final
04 05
Aug.04.2000 Dec.04.2000
Final Final
Apr.30.2001
Final
This document is a general product description and is subject to...