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HY62VT08081E - 32Kx8bit CMOS SRAM

This page provides the datasheet information for the HY62VT08081E, a member of the HY62KT08081E 32Kx8bit CMOS SRAM family.

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~.

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Datasheet Details

Part number HY62VT08081E
Manufacturer Hynix Semiconductor
File Size 188.55 KB
Description 32Kx8bit CMOS SRAM
Datasheet download datasheet HY62VT08081E Datasheet
Additional preview pages of the HY62VT08081E datasheet.

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Full PDF Text Transcription

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HY62K(U,V)T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No 00 www.DataSheet4U.com History Initial Merged 3.0V/3.3V SPEC Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jan.20.2000 Remark Final 01 Feb.21.2001 Final 02 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 02 / Apr.
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