Y27US08121M Datasheet - Hynix Semiconductor

HY27US08121M

Y27US08121M Features

* SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatibility for all densities STATUS REGISTER ELECTRONI

Y27US08121M General Description

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics (3V Product) 0.5 tCRY Before After 60 + tr 70 + tr tREA@ID Read 35 45 Jun. 01..

Y27US08121M Datasheet (796.67 KB)

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Y27US08121M

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Hynix Semiconductor

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796.67 KB

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hy27us08121m.
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.

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Y27US08121M HY27US08121M Hynix Semiconductor

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Y27US08121M Features

Y27US08121M General Description

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