* High-speed access times:
* 8, 10, 12 and 15 ns
* High-preformance, lower-power CMOS process
* Multiple center power and ground pins for greater noise immunity
* Easy memory expansion with CE and OE options
* CE power-down
* Fully static opera
IC61LV5128 Datasheet (151.24 KB)
IC61LV5128
ICSI
151.24 KB
512k x 8 hight speed sram.
IC61LV5128 Document Title 512K x 8 Hight Speed SRAM with 3.3V Revision History Revision No 0A History Initial Draft Draft Date Remark September.
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