F6102 Description
The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SAT phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain pensation between radiating elements. The device has 16dB nominal electric gain and -30dBm IP1dB.
F6102 Key Features
- 17.5GHz to 21.5GHz operation
- 8 radiation channels
- 6-bit phase control
- 20ns typical gain settling time
- 20ns typical phase settling time
- 3° typical RMS phase error
- 0.3dB typical RMS gain error
- 30dB gain attenuation range
- 5-bit IC address
- Integrated proportional-to-absolute temperature (PTAT)