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Integrated Device Technology Electronic Components Datasheet

IDT7M624S Datasheet

1M-Bit CMOS Static RAM Module

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FEATURES:
• High-density 1024K-bit CMOS static RAM module
• Customer-configured to 64K x 16, 128K x 8 or 256K x 4
• Fast access times
-Military: 45ns (max.)
-Commercial: 30ns (max.)
• Low power consumption
- Active 4.8W (typ. in 64K x 16 organization)
- Standby: 1.6mW (typ.)
• Utilizes 16 IDT7187 high-performance 64K x 1 CMOS static
RAMs produced with lOT's advanced CEMOS" technology
• CEMOS process virtually eliminates alpha particle soft error
rates (with no organic die coating)
• Assembled with lOT's high-reliability vapor phase solder
reflow process
• Offered in 40-pin, 900 mil center sidebraze DIP, achieving very
high memory density
• Pin compatible with IDT7M656 (256K RAM module)
• Single 5V (±10%) power supply
• Dual GND pins for maximum noise immunity
• Inputs and outputs directly TTL-compatible
• Modules available with semiconductor components 100%
screened to MIL-STD-883, Class B
• Finished modules tested at Room, Hot and Cold
temperatures for all AC and DC parameters as per
customer requirements
DESCRIPTION:
The IDT7M624 is a 1024K-bit high-speed CMOS static RAM
constructed on a multi-layered ceramic substrate using 16
IDT7187 (64K x 1) static RAMs in leadless chip carriers. Making
four chip select lines available (one for each group of 4 RAMs)
allows the user to configure the memory into a 64K x 16, 128K x 8
or 256K x 4 organization. In addition, extremely high speeds are
achievable by the use of IDT7187s fabricated in lOT's high-
performance, high-reliability technology, CEMOS. This state-of-
the-art technology, combined with innovative circuit design
techniques, provides the fastest 64K static RAMs available.
The IDT7M624 is available with access times as fast as 30ns
commercial and 45ns military temperature range, with maximum
operating power consumption of only 10.7W (significantly less
if organized 128K x 8 or 256K x 4). The module also offers a
standby power mode of 4.5W (max.) and a full standby mode
of 1.7W (max.).
The IDT7M624 is offered in a 40-pin, 900 mil center sidebraze
DIP to take advantage of the compact IDT7187s in lead less
chip carriers.
All inputs and outputs of the IDT7M624 are TTL-compatible
and operate from a single 5V supply. (NOTE: Both GND pins
need to be grounded for proper operation.) Fully asynchronous
circuitry is used requiring no clocks or refreshing for operation,
and provides equal access times for ease of use.
All lOT military module semiconductor components are 100%
processed to the test methods of MIL-STD-883, Class B, making
them ideally suited to applications demanding the highest level
of performance and reliability.
PIN CONFIGURATION
(')GND
D,s
CS(,._,S)
04
WE
A,
0,4
A.
Os
A3
A4
0'3
As
D.
A.
A'4
0,.
CS(4-7)
07
A,s
Vcc
0 11
CS(8-11)
Do
.Ao
A'3
0'0
A,.
0,
A11
A,o
D.
A.
D.
A.
A7
D.
CS(0-3)
03
GND(')
PIN NAMES
AD-'6
1/0,-8
CS
WE
Vee
GND
Addresses
Data Input/Output
Chip Select
Write Enable
Power
Ground
NOTE:
1. 80th GND pins need to be grounded for
proper operation.
FUNCTIONAL BLOCK DIAGRAM
CEMOS is a trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
@ 1986 Integrated Device Technology, Inc.
7-29
JULY 1986
Printed in U.S.A.


Integrated Device Technology Electronic Components Datasheet

IDT7M624S Datasheet

1M-Bit CMOS Static RAM Module

No Preview Available !

IDT7M624S 1 MEGABIT CMOS STATIC RAM MDDULE
ABSOLUTE MAXIMUM RATING(1)
SYMBOL
RATING
COMMERCIAL MILITARY UNIT
VTERM
Terminal Voltage
with Respecl
toGND
-0.5 to +7.0 -0.5 to +7.0 V
Operating
TA Temperature
Oto +70
-55 to +125 ·C
TBIAS
Temperature
Under Bias
-10 to +85 -65 to +135 ·C
TSTG
Storage
Temperature
-55 to +125 -65 to +150 ·C
PT Power Dissipation
8
8W
lOUT
DC Output Current
50
50 rnA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation 01 the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
GRADE
Military
Commercial
AMBIENT
TEMPERATURE
-55·C to +125·C
O·C to +70·C
GND
OV
OV
Vee
S.OV± 10%
S.OV± 10%
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN.
Vee
Supply Voltage
4.5
GND
Supply Voltage
0
VIH Input High Voltage 2.2
VIL Input Low Voltage -0.5(1)
NOTE:
1. VIL = -3.0V for pulse width less than 2Ons.
TYP.
5.0
0
-
-
MAX.
5.5
0
6.0
0.8
UNIT
V
V
V
V
DC ELECTRICAL CHARACTERISTICS (Vee = +S.OV ± 10%, TA = -SS·C to +12S·C and O·C to +70°C)
SYMBOL
IILlI
IILO I
PARAMETER
Input Leakage Current
Output Leakage Current
leex16
Operating Current in X16 mode
leex.
Operating Current in X8 mode
TEST CONDITIONS
Vee =5.5V, VIN =GND to Vee
Vee =5.5V,
CSxx = VIH, VOUT =GND to Vee
CSxx =VIL, Output Open
Vee =5.5V, I =IMax.
CS xx =VIL' Output Open
Min. Duty Cycle = 100%
MIN.
-
-
IDT7M624S
TYP.")
MAX.
- 20
- 20
- 960 1950
- 720 1380
Icex.
Operating Current in X4 mode
CSxx = VIL' Output Open
Min. Duty Cycle =100%
- 800 1100
ISB Standby Power Supply Current
CS xx '" VIH, (TTL Level),
Vee =5.5V, Output Open
- 480 820
ISBl Full Standby Power Supply Current
VOL Output Low Voltage
VOH Output High Voltage
NOTES:
1. Typical limits are at Vee = 5.0V, +25°C ambient.
2. ISBl max. at commercial temperature = 240 rnA.
CSxx '" Vee - 0.2\/,
VIN ", Vee - 0.2V or oS 0.2V (CMOS Level)
10L =lOrnA, Vee =4.5V
10L - 8mA, Vee =4.5V
IOL =-4mA, Vee =4.5V
-
-
-
2.4
0.32 320(2)
- 0.5
- 0.4
--
UNIT
p.A
p.A
rnA
rnA
rnA
rnA
rnA
V
V
V
7-30


Part Number IDT7M624S
Description 1M-Bit CMOS Static RAM Module
Maker IDT
Total Page 6 Pages
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