IDT7M656L
Key Features
- High-density 256K-bit CMOS static RAM Module
- Fast access times -mercial - 25ns -Military - 35ns
- Low-power consumption -Active: 3.2W (typ.) (in 16K x 16 organization) -Standby: 0.16mW (typ.)
- Utilizes 161DT6167s - high-performance 16K x 1 CMOS static RAMs produced with IDT's advanced CEMOS~ technology
- CEMOS process virtually eliminates alpha particle soft error rates (with no organic die coating)
- Assembled with IDT's high-reliability vapor phase solder reflow process
- Offered in 40-pin, 900 mil center sidebraze DIP. achieving very high memory density
- Single SV (±10%) power supply
- Dual Vee and GND pins for maximum noise immunity
