IDT8M612
Description
The IDT8M624/1DT8M612 are.
Key Features
- High-density 1024K1512K-bit CMOS static RAM module
- Upper byte (1/09-'6) and lower byte (1I0,-sl separated control -allows flexibility in application
- High-speed - 60ns (max.) mercial; 75ns (max.) military
- Low-power consumption
- process virtually eliminates alpha particle soft error rates (with no organic die coating)
- Assembled with IDT's high-reliability vapor phase solder reflow process
- Offered in the JEDEC standard 40-pin, 600 mil wide ceramic sidebraze DI P
- Single 5V (±10%) power supply
- Finished modules tested at Room, Hot and Cold temperatures for all AC and DC parameters as per customer requirements
