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Integrated Device Technology Electronic Components Datasheet

IDT8MP624S Datasheet

CMOS Static RAM Module

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FEATURES:
• High-density 1024K/512K-bit CMOS static RAM module
• 64K x 16 organization (IDT8MP624) with 32K x 16
option (IDT8MP612)
• Upper byte (1I09-,sl and lower byte (1101-8)
separated control
-Allows flexibility in application
• Equivalent to JEDEC standard for future monolithic
64K x 8/32K x 16 static RAMs
• Fast access times
-60ns (max.) over commercial temperature range
• Low-power consumption
• CEMOS'· process virtually eliminates alpha particle soft error
rates (with no organic die coating)
• Offered in both DIP and SIP (single in-line) packages for
maximum space-saving flexibility
• Cost-effective plastic surface-mounted RAM packages on an
epoxy laminate (FR4) substrate
• Single 5V (±10%) power supply
• Inputs and outputs directly TTL-compatible
DESCRIPTION:
The IDT8MP624/1DT8MP612 are 1024K/512K high-speed
CMOS static RAMs constructed on an epoxy laminate sub-
strate using four IDT71256 32K x 8 static RAMs (IDT8MP624)
or two IDT71256 static RAMs (IDT8MP612) in plastic surface-
mount packages. Functional equivalence to proposed mono-
lithic static RAMs is achieved by utilization of an on-board
decoder that interprets the higher order address A,s to select
one of the two 32K x 16 RAMs as the by-16 output and using
LB and UB as two extra chip select functions for lower byte
(1/0,-8) and upper byte (1/09-16) control, respectively. (On the
IDT8MP612 32K x 16 option, A,s needs to be externally
grounded for proper operation.) Extremely high speeds are
achieved by the use of IDT71256s fabricated in IDT's high-
performance, high-reliability technology, CEMOS. This state-
of-the-art technology, combined with innovative circuit design
techniques, provides the fastest 1024K/512K static RAMs
available.
The IDT8MP624/1DT8MP612 are available with access times
as fast as 60ns over commercial temperatu re range, with maxi-
mum operating power consumption of only 1.7W (64K x 16
option). The module also offers a full standby mode of 110mW
(max.).
The IDT8MP624/1DT8MP612 are offered in a 4o-pin plastic
SIP package, as well as a 40-pin DIP which conform to JEDEC
standard pinouts.
All inputs and outputs of the IDT8MP824/1DT8MP612 are
TTL-compatible and operate from a single 5V supply. (NOTE:
Both GND pins need to be grounded for proper operation.)
Fully asynchronous circuitry is used requiring no clocks or
refreshing for operation, and provides equal access and cycle
ti mes for ease of use.
FUNCTIONAL BLOCK DIAGRAM
Ao-A,.
1/0,-liD.
110,-110"
WE
----DE
r---
..---
IDm256
IDm256
- 32K x8
CMOS
~ 32K x 8
I-- CMOS
---STATIC
RAM
.--
STATIC
RAM
IDm256
_ 32KxB
- CMOS
' - - - - STATIC
RAM
Ac1s5::II:;D!E:ID:E~R~g[1~
IDm256
-= ~~~:
- STATIC
RAM
---, r--
LS ~1/2 ~~~ 1~t:
DECODER
'1
SSDBMP624-001
CEMOS is a trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE
@ 1986 Integrated Device Technology, Inc.
7-60
JULY 1986
Printed In U.S.A.


Integrated Device Technology Electronic Components Datasheet

IDT8MP624S Datasheet

CMOS Static RAM Module

No Preview Available !

IDTBMP624/1DTBMP6121024K (64K x 16-BIT)
& 512K (32K x 16-BIT) PLASTIC STATIC RAM MODULES
PIN CONFIGURATIONS
COMMERCIAL TEMPERATURE RANGE
PIN NAMES
AO-'5
1/0,_'6
CS
WE
Vee
GND
OE
UB
LB
Addresses
Data Input/Output
Chip Select
Write Enable
Power
Ground
Output Enable
Upper Byte Control
Lower Byte Control
SSDBMP624-002
NOTES:
1. Both GND pins need to be grounded for
proper operation.
2. On IDT8MP612, 512K (32K x 16-bit)
option, A,s (pin 1 - DIP; Pin 31 - SIP)
requires external grounding for proper
operation.
SIP
SIDE VIEW
SSD8MP624-003
7-61


Part Number IDT8MP624S
Description CMOS Static RAM Module
Maker IDT
Total Page 2 Pages
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