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INA2586 - 1024 x 8 EEPROM

Description

SYMBOL Uss CS TP1 TP2 SDA SCL TP3 Ucc PIN 1 2 3 4 5 6 7 8 DESCRIPTION GND Chip selection Testing pin Testing pin (0V - normal mode, 5V - chip erasing) Informational line, input/output Clock input Testing pin, not connected Supply Voltage w w w t a .D Erase and Write UTP2= 5,0 B S a e h ILOH

Features

  • . w w.
  • Non-volatile storage of information during 10 years Single supply (Ucc=4,75 B - 5,25 B) On-chip voltage multiplier On-chip generator of bulk biasing Serial input/output I2C-bus 10 000 ERASE/WRITE cycles per byte; Internal reprogramming (no external components) Duration of the ERASE/WRITE cycle is 15 ms Temperature range: 0 ÷ +700C m o . c.

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Datasheet preview – INA2586

Datasheet Details

Part number INA2586
Manufacturer IK Semiconductor
File Size 112.94 KB
Description 1024 x 8 EEPROM
Datasheet download datasheet INA2586 Datasheet
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Full PDF Text Transcription

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w U 4 t 1024 x 8-Bit n-MOS EEPROM with I2C-Bus Interface e e h S a t a D FEATURES . w w ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Non-volatile storage of information during 10 years Single supply (Ucc=4,75 B - 5,25 B) On-chip voltage multiplier On-chip generator of bulk biasing Serial input/output I2C-bus 10 000 ERASE/WRITE cycles per byte; Internal reprogramming (no external components) Duration of the ERASE/WRITE cycle is 15 ms Temperature range: 0 ÷ +700C m o .c TECHNICAL DATA INA2586 The INA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM). IC works in systems with serial I2C-bus. Up to two INA2586 devices may be connected to the I2C-bus.The programming of the array is implemented by electron’s tunneling.
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