Datasheet Details
| Part number | 10N50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.49 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 10N50 Datasheet
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| Part number | 10N50 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.49 KB |
| Description | N-Channel MOSFET |
| Datasheet |
10N50 Datasheet
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·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as switching regulators, switching converters,motor drivers,relay drivers and drivers for power bipolar switching transistors requiring High speed and low gate drive power ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 10N50 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 10N50.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
10N50 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
|
10N50K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
| PINGWEI | 10N50TF | N-Channel MOSFET | PINGWEI |
| Part Number | Description |
|---|---|
| 10N12 | N-Channel MOSFET |
| 10N45 | N-Channel MOSFET |