Download 20ETF10 Datasheet PDF
Inchange Semiconductor
20ETF10
FEATURES - With TO-220 packaging - Low forward voltage drop - Super high speed switching - High reliability by planer design - High surge current capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - Power switching circuits - High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current @Tc=97℃;180°condition half sine wave IFSM Non-repetitive Peak Surge Current 10ms sine pulse, rated VRRM applied Junction Temperature Tstg Storage Temperature Range 1000 V 20 A 300 A -40~150 ℃ -40~150 ℃ 20ETF10 isc website:.iscsemi. 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.9 UNIT ℃/W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER...