2N1702 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : VCEO=60V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Volt

INCHANGE

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Datasheet Details

Part number	2N1702
Manufacturer	INCHANGE
File Size	214.69 KB
Description	Silicon NPN Power Transistor
Datasheet	2N1702 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=60V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N1702 isc website： www.iscsemi.

Published: Mar 12, 2021 |