Datasheet Details
| Part number | 2N1702 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.69 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N1702 Download (PDF) |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2N1702 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.69 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N1702 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : VCEO=60V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N1702 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N1702 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IB=10uA ICEO Collector-Emitter Cutoff Current VCE= 30V VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A;
IB= 0.08A VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A;
IB= 0.08A hFE-1 DC Current Gain IC=0.8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N1702 | NPN Transistor | SSDI |
| Part Number | Description |
|---|