Datasheet Details
| Part number | 2N3226 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.75 KB |
| Description | NPN Transistor |
| Datasheet | 2N3226-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N3226 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 166.75 KB |
| Description | NPN Transistor |
| Datasheet | 2N3226-INCHANGE.pdf |
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% test ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCER Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3226 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3226 | Silicon NPN Power Transistors | SavantIC |
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