Datasheet Details
| Part number | 2N4070 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.42 KB |
| Description | NPN Transistor |
| Datasheet | 2N4070-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N4070 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 179.42 KB |
| Description | NPN Transistor |
| Datasheet | 2N4070-INCHANGE.pdf |
|
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 65 W TJ Operating Temperature Range -65~+150 ℃ Tstg Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.5 ℃/W 2N4070 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) * Collector-Emitter Sustaining Voltage IC=100mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4070 | NPN Transistor | SSDI |
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