Datasheet Details
| Part number | 2N4111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.85 KB |
| Description | NPN Transistor |
| Datasheet | 2N4111-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N4111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.85 KB |
| Description | NPN Transistor |
| Datasheet | 2N4111-INCHANGE.pdf |
|
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Operating Temperature Range -65~+165 ℃ Tstg Storage Junction Temperature Range -65~+165 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.67 ℃/W 2N4111 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 ICEO Collector Cutoff Current VCE= 60V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4111 | Bipolar NPN Device | Seme LAB |
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