Datasheet Details
| Part number | 2N4240 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.81 KB |
| Description | NPN Transistor |
| Datasheet | 2N4240-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N4240 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.81 KB |
| Description | NPN Transistor |
| Datasheet | 2N4240-INCHANGE.pdf |
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for switching regulator applications where high frequency and high voltage swings and required ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W 2N4240 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA;
IB= 0 ICEO Collector Cutoff Current VCE=150V;IB= 0 ICEX Collector-Emitter Leakage current VCE=450V,VBE(OFF)=1.5V IEBO Emitter Cutoff Current VEB= 6V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4240 | NPN TRANSISTOR | Seme LAB |
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2N4240 | NPN Silicon Power Transistors | Microsemi Corporation |
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