2N5108 Description
·High Current-Gain Bandwidth Product : MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V;.
2N5108 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
·High Current-Gain Bandwidth Product : MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V;.