| Part number | 2N5109 |
|---|---|
| Datasheet | 2N5109-INCHANGE.pdf |
| File Size | 183.99 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Current-Gain Bandwidth Product : MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N5109 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi Corporation |
 |
2N5109 | HIGH FREQUENCY TRANSISTOR | Motorola |
 |
2N5109 | NPN RF TRANSISTOR | Central Semiconductor |
 |
2N5109 | NPN SILICON HIGH FREQUENCY TRANSISTOR | ASI |
 |
2N5109 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Advanced Power Technology |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N5108 | Silicon NPN Power Transistor |
| 2N5038 | NPN Transistor |
| 2N5202 | NPN Transistor |
| 2N5297 | NPN Transistor |
| 2N5302 | NPN Transistor |
| 2N5345 | PNP Transistor |
| 2N5466 | NPN Transistor |
| 2N5467 | NPN Transistor |
| 2N5468 | NPN Transistor |
| 2N5469 | NPN Transistor |
