2N5109
2N5109 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Current-Gain Bandwidth Product
: f T= 1200MHz (Min) @VCE = 10V,IE = 50m A
- Low Saturation Voltage
- Good Linearity of h FE
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose Class C amplifier applications up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current
Collector Power Dissipation @TC=25℃
PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
3.5 W
℃
Tstg
Storage Temperature Range
-55~175 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
