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2N5297 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor 2N5297.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power switching amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.0 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.0 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.47 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N5297 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;

IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A;

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