| Part number | 2N5302 |
|---|---|
| Datasheet | 2N5302-INCHANGE.pdf |
| File Size | 192.39 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·plement to Type 2N4399 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in power amplifier and switching circuits applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N5302 | POWER TRANSISTORS | ON Semiconductor |
 |
2N5302 | NPN SILICON POWER TRANSISTOR | SSDI |
 |
2N5302 | Bipolar NPN Device | Seme LAB |
 |
2N5302 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi |
 |
2N5302 | SILICON NPN Transistor | Toshiba |
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