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INCHANGE

2N5302 Datasheet Preview

2N5302 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2N5302
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.75V(Max.)@ IC= 10A
·Wide Area of Safe Operation
·Complement to Type 2N4399
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in power amplifier and switching circuits
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation@TC=25
200
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 34 /W
Rth j-c Thermal Resistance,Junction to Case
0.875 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N5302 Datasheet Preview

2N5302 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
VBE(sat)-3 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(on)-1 Base-Emitter On Voltage
IC= 15A; VCE= 2V
VBE(on)-2 Base-Emitter On Voltage
IC= 30A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 60V; IE= 0
VCE= 60V; VBE(off)= 1.5V
VCE= 60V; VBE(off)= 1.5V,TC=150
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 15A; VCE= 2V
hFE-3
DC Current Gain
IC= 30A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V ;ftest= 1.0MHz
Switching Times
tr
Rise Time
ts
Storage Time
VCC= 30V; IC= 10A; IB1= -IB2= 1A
tf
Fall Time
2N5302
MIN MAX UNIT
60
V
0.75
V
2.0
V
3.0
V
1.7
V
1.8
V
2.5
V
1.7
V
3.0
V
5.0
mA
1.0
mA
1.0
10
mA
5.0
mA
40
15
60
5
2
MHz
1.0
μs
2.0
μs
1.0
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N5302
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2N5302 Datasheet PDF





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