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2N5302 - NPN Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A Wide Area of Safe Operation Complement to Type 2N4399 100% avalanche tested

and reliable operation.

Designed for use in power amp

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isc Silicon NPN Power Transistors INCHANGE Semiconductor 2N5302 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4399 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.
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