2N5661
2N5661 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: VCEO=300V(Min)
- Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
- Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature Range
-65~200 ℃
2N5661 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10m...
