| Part number | 2N5661 |
|---|---|
| Datasheet | 2N5661-INCHANGE.pdf |
| File Size | 217.46 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ICBO Collector-Base Cutoff Current VCB= 300V ICEO Collector-Emitter Cutoff Current VCE= 300V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N5661 | NPN POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N5661 | Bipolar NPN Device | Seme LAB |
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2N5661 | Silicon NPN Transistor | Semicoa Semiconductor |
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2N5661 | (2N5660 / 2N5661) Silicon NPN Power Transistors | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N5665 | Silicon NPN Power Transistor |
| 2N5655 | NPN Transistor |
| 2N5656 | NPN Transistor |
| 2N5038 | NPN Transistor |
| 2N5108 | Silicon NPN Power Transistor |
| 2N5109 | NPN Transistor |
| 2N5202 | NPN Transistor |
| 2N5297 | NPN Transistor |
| 2N5302 | NPN Transistor |
| 2N5345 | PNP Transistor |
