2N5665 transistor equivalent, silicon npn power transistor.
*Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
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UNI T
VCBO
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*Collector-Emitter Breakdown Voltage-
: VCEO=300V(Min)
*Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
*Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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