Datasheet4U Logo Datasheet4U.com

2N5989 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2N5989

Datasheet Details

Part number 2N5989
Manufacturer INCHANGE
File Size 185.13 KB
Description NPN Transistor
Datasheet download datasheet 2N5989 Datasheet
Additional preview pages of the 2N5989 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collec

📁 Similar Datasheet

  • 2N5980 - HIGH POWER PNP SILICON TRANSISTORS (ETC)
  • 2N5981 - HIGH POWER PNP SILICON TRANSISTORS (ETC)
  • 2N5982 - HIGH POWER PNP SILICON TRANSISTORS (ETC)
  • 2N5983 - HIGH POWER NPN SILICON TRANSISTORS (ETC)
  • 2N5984 - HIGH POWER NPN SILICON TRANSISTORS (ETC)
  • 2N5985 - HIGH POWER NPN SILICON TRANSISTORS (ETC)
  • 2N5986 - 12 AMPERE POWER TRANSISTORS (Motorola Inc)
  • 2N5987 - 12 AMPERE POWER TRANSISTORS (Motorola Inc)
Other Datasheets by INCHANGE
Published: |