| Part number | 2N6032 |
|---|---|
| Datasheet | 2N6032-INCHANGE.pdf |
| File Size | 215.66 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA ICBO Collector-Base Cutoff Current VCB= 120V ICEO Collector-Emitter Cutoff Current VCB= 80V IEBO Emitter-Base Cutoff Current VEB= 7V VCE(sat) Collector-Emitter Saturation Voltage IC= 50A;...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6032 | NPN High Power Silicon Transistor | VPT |
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2N6032 | NPN POWER SILICON TRANSISTOR | Microsemi |
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2N6032 | Bipolar NPN Device | Seme LAB |
See all Inchange Semiconductor datasheets
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| 2N6056 | NPN Transistor |
| 2N6078 | NPN Transistor |
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| 2N6101 | NPN Transistor |
