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2N6032 Silicon NPN Power Transistor

2N6032 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

2N6032 Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD

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Datasheet Details

Part number
2N6032
Manufacturer
INCHANGE
File Size
215.66 KB
Datasheet
2N6032-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2N6032-like datasheet