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2N6032 Datasheet Preview

2N6032 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO=90V(Min)
·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
50
A
IB
Base Current-Continuous
PD
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
10
A
140
W
200
Tstg
Storage Temperature Range
-65~200
2N6032
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6032 Datasheet Preview

2N6032 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA
ICBO
Collector-Base Cutoff Current
VCB= 120V
ICEO
Collector-Emitter Cutoff Current
VCB= 80V
IEBO
Emitter-Base Cutoff Current
VEB= 7V
VCE(sat) Collector-Emitter Saturation Voltage IC= 50A; IB= 5A
VBE(sat)
Base-Emitter Saturation Voltage
IC= 50A; IB= 5A
hFE
DC Current Gain
IC= 50A; VCE= 2.6V
2N6032
MIN TYP. MAX UNIT
90
V
25
mA
10
mA
10
mA
1.3
V
2
V
10
50
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N6032
Description Silicon NPN Power Transistor
Maker INCHANGE
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2N6032 Datasheet PDF






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