2N6032 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

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Datasheet Specifications

Part number: 2N6032
Manufacturer: INCHANGE
File Size: 215.66 KB
Datasheet: 2N6032-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD

2N6032 Distributors

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2N6032 Silicon NPN Power Transistor INCHANGE

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