Datasheet Details
| Part number | 2N6078 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.05 KB |
| Description | NPN Transistor |
| Datasheet | 2N6078-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6078 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.05 KB |
| Description | NPN Transistor |
| Datasheet | 2N6078-INCHANGE.pdf |
|
|
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·Low Collector-Emitter Sustaining Voltage ·High voltage ·Low Collector-Emitter Saturation Voltage·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear applications ·Power switching circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 275 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current 7 A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 45 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6078 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 200mA;
IB= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.2A;
IB= 0.2A V CE(sat)-2* Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6078 | Silicon Power Transistor | SavantIC |
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2N6078 | NPN MULTI - EPITAXIAL POWER TRANSISTOR | Seme LAB |
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