Datasheet Details
| Part number | 2N6100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.44 KB |
| Description | NPN Transistor |
| Datasheet | 2N6100-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.44 KB |
| Description | NPN Transistor |
| Datasheet | 2N6100-INCHANGE.pdf |
|
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·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W 2N6100 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6100 | Power Transistors | RCA |
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2N6100 | Silicon Power Transistor | SavantIC |
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