Datasheet Details
| Part number | 2N6108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.30 KB |
| Description | PNP Transistor |
| Datasheet | 2N6108-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2N6108.
| Part number | 2N6108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.30 KB |
| Description | PNP Transistor |
| Datasheet | 2N6108-INCHANGE.pdf |
|
|
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·DC Current Gain- : hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6108 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A;
IB= -3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= -7A ;
VCE= -4V VCE= -60V;
Compare 2N6108 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6108 | Power Transistors | RCA |
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2N6108 | Silicon Power Transistor | SavantIC |
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