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2N6129 Datasheet Preview

2N6129 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6129
DESCRIPTION
·DC Current Gain-
: hFE = 20-100@ IC= 2.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)
·Complement to Type 2N6132
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in power amplifier and switching circuits
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current
PC
Collector Power Dissipation
TC=25
Tj
Junction Temperature
2
A
50
W
150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6129 Datasheet Preview

2N6129 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A
VBE(on) Base-Emitter On Voltage
IC= 7A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2.5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 7A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V
2N6129
MIN MAX UNIT
40
V
1.4
V
3.0
V
0.1
mA
1.0
mA
1.0
mA
20
100
5
2.5
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6129
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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2N6129 Datasheet PDF





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