Datasheet Details
| Part number | 2N6129 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.04 KB |
| Description | NPN Transistor |
| Datasheet | 2N6129-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6129.
| Part number | 2N6129 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.04 KB |
| Description | NPN Transistor |
| Datasheet | 2N6129-INCHANGE.pdf |
|
|
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·DC Current Gain- : hFE = 20-100@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Complement to Type 2N6132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
IB= 1.4A VBE(on) Base-Emitter On Voltage IC= 7A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6129 | Silicon Power Transistor | SavantIC |
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