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2N6129 INCHANGE NPN Transistor

Description ·DC Current Gain- : hFE = 20-100@ IC= 2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min) ·Complement to Type 2N6132 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40...
Features B= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 4V ICBO Collector Cutoff Current VCB= 40V; IE= 0 ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2.5A ; VCE= 4V hFE-2 DC Current Gain IC= 7A ; VCE= 4V ...

Datasheet PDF File 2N6129 Datasheet - 190.04KB

2N6129  






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