Datasheet Details
| Part number | 2N6704 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 130.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2N6704 Datasheet
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| Part number | 2N6704 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 130.25 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2N6704 Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 180 V VCEO Collector-Emitter Voltage 130 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 5 A 50 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6704 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2N6704 | High-Current silicon NPN Versawatt Transistors | ETC |
| Part Number | Description |
|---|---|
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