2SA1006A Overview
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA;.

