2SA1116 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·High Power Dissipation ·plement to Type 2SC2607 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
