isc Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max.)@IC= -3A
·High Switching Speed
·Complement to Type 2SC3299
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
-1
A
2
W
20
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1307
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
