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2SA1307 Datasheet Preview

2SA1307 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max.)@IC= -3A
·High Switching Speed
·Complement to Type 2SC3299
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-1
A
2
W
20
150
Tstg
Storage Temperature
-55~150
2SA1307
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SA1307 Datasheet Preview

2SA1307 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
2SA1307
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -1V
hFE-2
DC Current Gain
IC= -3A; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -4V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= -0.15A; VCC= -30V;
RL= 10Ω; Duty Cycle1%
MIN TYP. MAX UNIT
-50
V
-0.4
V
-1.2
V
-1.0 μA
-1.0 μA
70
240
30
60
MHz
170
pF
0.1
μs
1.0
μs
0.1
μs
hFE-1 Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA1307
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SA1307 Datasheet PDF





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