900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2SA1648 Datasheet Preview

2SA1648 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1648
DESCRIPTION
·Available for high-current control in small dimension
·Low collector saturation voltage:
VCE(sat)= -0.3V(Max)@ IC= -3A
·Fast switching speed
·High DC current gain and excellent linearity
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@Ta=25NOTE2
TJ
Junction Temperature
-10
A
18
W
1.0
150
Tstg
Storage Temperature Range
-55~150
NOTE1:PW≤10ms,Duty cycle ≤50%
NOTE2:Printing boarding mounted
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SA1648 Datasheet Preview

2SA1648 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1648
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA
VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -200mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= -3A; IB= -150mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= -4A; IB= -200mA
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1NOTE
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2NOTE
DC Current Gain
IC= -1A; VCE= -2V
hFE-3NOTE
DC Current Gain
IC= -3A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
IC= -500mA; VCE= -10V
hFE-2 Classifications
M
L
K
100-200 150-300 200-400
MIN TYP. MAX UNIT
-0.3 V
-0.5 V
-1.2 V
-1.5 V
-10 μA
-10 μA
100
100
400
60
80
pF
90
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SA1648
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

2SA1648 Datasheet PDF





Similar Datasheet

1 2SA1640 SILICON POWER TRANSISTOR
SavantIC
2 2SA1640 POWER TRANSISTOR
Inchange Semiconductor
3 2SA1641 PNP Epitaxial Planar Silicon Transistor
Sanyo Semicon Device
4 2SA1643 SILICON POWER TRANSISTOR
SavantIC
5 2SA1643 POWER TRANSISTOR
Inchange Semiconductor
6 2SA1644 SILICON POWER TRANSISTOR
SavantIC
7 2SA1644 POWER TRANSISTOR
Inchange Semiconductor
8 2SA1645 PNP Transistor
NEC
9 2SA1645 SILICON POWER TRANSISTOR
SavantIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy