Datasheet Details
| Part number | 2SA2022 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.72 KB |
| Description | PNP Transistor |
| Download | 2SA2022 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2022.
| Part number | 2SA2022 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.72 KB |
| Description | PNP Transistor |
| Download | 2SA2022 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High-speed switching.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers, strobes.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 2 W 18 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2022 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA2022 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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