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2SA2022 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min)

High-speed switching.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Relay drivers, lamp drivers, motor drivers, strobes.

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2022 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High-speed switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers, strobes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 2 W 18 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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