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2SA715 - PNP Transistor

Datasheet Summary

Description

Good Linearity of hFE Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V (Min) Complement to Type 2SC1162 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Datasheet Details

Part number 2SA715
Manufacturer INCHANGE
File Size 193.65 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor 2SA715 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V (Min) ·Complement to Type 2SC1162 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 0.75 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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