Datasheet Details
| Part number | 2SA795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.14 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA795-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA795 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.14 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA795-INCHANGE.pdf |
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·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA795 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -300mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA795 | PNP Transistor | Panasonic Semiconductor |
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2SA795A | PNP Transistor | Panasonic Semiconductor |
| Part Number | Description |
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| 2SA740 | PNP Transistor |
| 2SA743 | PNP Transistor |
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| 2SA745A | PNP Transistor |
| 2SA746 | PNP Transistor |
| 2SA754 | PNP Transistor |
| 2SA758 | PNP Transistor |